Soumis par Anonyme (non vérifié) le jeu, 01/21/2021 - 16:39
Tags:
HIGH POWER COMPONENT
MICRO-RAMAN SPECTROSCOPY
Optical characterization of high power GaN components
Coordinateur:
INSA LYON - LABORATOIRE AMPERE
Responsable INSA:
Camille SONNEVILLE
Wide-Bandgap semiconductors such as silicon carbides (SiC) or Gallium Nitrides (GaN) are particularly interested in power electronic. Indeed Wide-bandgap semiconductors permit devices to operate at much higher voltages, frequencies and temperatures than conventional semiconductor materials like silicon. They will be a foundational technology in new electrical grid and alternative energy devices.