LN2 SHERBROOKE

OPTIGAN

Tags: 
HIGH POWER COMPONENT
MICRO-RAMAN SPECTROSCOPY
Optical characterization of high power GaN components
Coordinateur: 
INSA LYON - LABORATOIRE AMPERE
Responsable INSA: 
Camille SONNEVILLE

Wide-Bandgap semiconductors such as silicon carbides (SiC) or Gallium Nitrides (GaN) are particularly interested in power electronic. Indeed Wide-bandgap semiconductors permit devices to operate at much higher voltages, frequencies and temperatures than conventional semiconductor materials like silicon. They will be a foundational technology in new electrical grid and alternative energy devices.

Enjeu: 
Energie pour un développement Durable
Partenaires: 
LN2 SHERBROOKE
QUEBEC
Financement: 
REGION AURA
Dates projet: 
2020-02-01 00:00:00 - 2021-12-01 00:00:00
Montant global du projet: 
20700