Submitted by Elena Manea on Mon, 01/13/2025 - 11:07
Keywords:
ELECTRONIQUE DE PUISSANCE
SEMI-CONDUCTEURS A LARGE BANDE INTERDITE
CHARacterization of Wide band gap Power Devices
Project Leader:
INSA Lyon
INSA’s scientific leader:
Camille SONNEVILLE
The energy transition will require power electrical devices able to manage high voltages and high currents. Although today’s electronic converter’s market is dominated by silicon-based technology, these electronic devices have elevated intrinsic losses due to silicon physical limited properties. Thanks to their physical properties Wide-Band-Gap (WBG) semiconductors such as silicon carbides (SiC) or Gallium Nitride (GaN) or even Ultra Wide-Band Gap (UWBG) semiconductor such as diamond, Ga2O3 or AlN are particularly interesting for power electronic.
INSA Challenge:
Energie pour un développement Durable
Funding Institution:
ANR
Dates - Duration:
2024-10-01 00:00:00 to 2028-06-01 00:00:00
Funding:
253848
Contact:
camille.sonneville@insa-lyon.fr
Chapo:
Wide-band-gap and ultra-wide-band-gap semiconductors for power electronics: what role do defects play in electrical performance?
L'objectif d'ELEGaNT est d'ouvrir la voie à la réalisation de dispositifs verticaux GaN sur Silicum rentables et performants avec une tension de claquage élevée
Français