The energy transition will require power electrical devices able to manage high voltages and high currents. Although today’s electronic converter’s market is dominated by silicon-based technology, these electronic devices have elevated intrinsic losses due to silicon physical limited properties. Thanks to their physical properties Wide-Band-Gap (WBG) semiconductors such as silicon carbides (SiC) or Gallium Nitride (GaN) or even Ultra Wide-Band Gap (UWBG) semiconductor such as diamond, Ga2O3 or AlN are particularly interesting for power electronic. These materials are not all at the same stage of maturity, and their fields of application are not yet fully identified.  
In this project, we will use physical characterization methods such as micro-Raman spectroscopy to understand how stress, doping levels and homogeneity, structural defects and impurities impact the power device electrical performance. The objective of the CHAR-WPD project is to set up a methodology for characterizing WBG and UWBG material and components (GaN, diamond and Ga2O3). The development of more efficient WBG or UWBG devices should notably improve the energy conversion efficiency for transport electrification.