THYRISTOR

CARTHAGE

Keywords: 
SILICON CARBIDE (SIC)
THYRISTOR
Conception Avancée et Réalisation de Thyristors A Grande Energie
Project Leader: 
CEA-LETI
INSA’s scientific leader: 
Luong-Viet PHUNG

The civilian market for SiC (Silicon Carbide) power components has grown exponentially since the 2010s, thanks to the needs of the automotive and solar industries. The industrial offer is now mature for 1200 V and 1700 V SiC components, whether diodes or MOSFETs. However, as breakdown voltage increases, the supply on the market becomes increasingly scarce. This is due to the small size of the market and the technological difficulties still to be resolved. However, the SiC semiconductor is probably even more attractive at higher voltages (3.3 kV-10 kV) than Si (silicon) and SiC solutions.

INSA Challenge: 
Energie pour un développement Durable
Partners: 
IBS ION BEAM SERVICES
ISL-INSTITUT FRANCO ALLEMAND RECHERCHES SAINT LOUIS
DEEP CONCEPT
Funding Institution: 
ANR
Dates - Duration: 
2024-01-01 00:00:00 to 2026-06-01 00:00:00
Funding: 
507650
Contact: 
luong-viet.phung@insa-lyon.fr
Chapo: 
With no research group in Europe focusing on silicon carbide thyristors for very high current applications, the CARTHAGE project is an opportunity to transform concepts previously developed by ISL and Ampère into a semi-industrial product using a stable, repeatable manufacturing process controlled in the CEA-Leti cleanroom