Wide-Bandgap semiconductors such as silicon carbides (SiC) or Gallium Nitrides (GaN) are particularly interested in power electronic. Indeed Wide-bandgap semiconductors permit devices to operate at much higher voltages, frequencies and temperatures than conventional semiconductor materials like silicon. They will be a foundational technology in new electrical grid and alternative energy devices.

This project between Ampere laboratory (INSA Lyon) and LN2 (University of Sherbrooke, QC, Canada) aims to better understand and improve the electric properties of vertical GaN devices by means of coupled physical characterizations such as micro-Raman spectroscopy, photo-luminescent and micro-OBIC (Optical Beam Induced Current). The coupling of these means of characterization will  allow a better physical understanding of GaN device limitations and will be an asset to improve the vertical GaN technology.