QUEBEC

OPTIGAN

Keywords: 
HIGH POWER COMPONENT
MICRO-RAMAN SPECTROSCOPY
Optical characterization of high power GaN components
Project Leader: 
INSA LYON - LABORATOIRE AMPERE
INSA’s scientific leader: 
Camille SONNEVILLE

Wide-Bandgap semiconductors such as silicon carbides (SiC) or Gallium Nitrides (GaN) are particularly interested in power electronic. Indeed Wide-bandgap semiconductors permit devices to operate at much higher voltages, frequencies and temperatures than conventional semiconductor materials like silicon. They will be a foundational technology in new electrical grid and alternative energy devices.

INSA Challenge: 
Energie pour un développement Durable
Partners: 
LN2 SHERBROOKE
QUEBEC
Funding Institution: 
REGION AURA
Dates - Duration: 
2020-02-01 00:00:00 to 2021-12-01 00:00:00
Funding: 
20700