FRENCHDIAM seeks to exploit the exceptional properties of diamond, such as its resistance to high electric fields, its resistance to high temperatures and its outstanding thermal conductivity. The project aims to demonstrate the feasibility of two complementary advanced diamond devices: a high-voltage vertical transistor and a monolithic switching cell. Various technological steps required for a production chain will be developed, such as growth of large substrates, epitaxy of doped layers, structuring in clean rooms, peripheral protection and design of control electronics. FRENCHDIAM will also focus on assessing the environmental impact of diamond component manufacturing.
Visuel:

Partenaires:
Laboratoires:
Dates projet:
De 05/2024 hasta 04/2028
Financement:
Contact:
luong-viet.phung@insa-lyon.fr
Coordinateur:
CNRS DR14 Occitanie-Ouest Toulou
Responsable INSA:
Luong-Viêt PHUNG
Sous-Titre:
La filière française du diamant pour l’électronique de puissance
Montant global du projet:
2100000' €'
Chapo:
Unite national research efforts on diamond for power electronics, go beyond the state of the art and establish a roadmap for the industry