FRENCHDIAM seeks to exploit the exceptional properties of diamond, such as its resistance to high electric fields, its resistance to high temperatures and its outstanding thermal conductivity. The project aims to demonstrate the feasibility of two complementary advanced diamond devices: a high-voltage vertical transistor and a monolithic switching cell. Various technological steps required for a production chain will be developed, such as growth of large substrates, epitaxy of doped layers, structuring in clean rooms, peripheral protection and design of control electronics.

The project aims to design and fabricate diamond power semiconductor devices.

https://www.laas.fr/projects/MOVETODIAM/