GOPOWER project concerns “Basic Science for Energy”. Ga2O3 ( Gallium oxide or Gallia) is an emerging ultra-wide bandgap semiconductor material for future high-power devices (beyond 6.5 kV) devoted to energy applications such as electric transportation and smart grids.

All Ga2O3 power devices demonstrated so far have been unipolar (n-type based) in nature. P-type material is absolutely necessary for realization of bipolar devices operating at very high voltages. GOPOWER objective is to accelerate the demonstration of Ga2O3 outstanding potential with demonstration of p-type 2-inch Ga2O3 epi-layers, suitable for integration into a rectifying power PiN diode structure with breakdown voltage target of > 6,5 kV. To reach this goal, which represents a very important breakthrough in current Ga2O3 technology, GOPOWER ‘s international consortium will apply a multi route strategy based on unique expertise of material design (with ab-initio calculation), growth, advanced material and device characterization and device modelling.