ELEGaNT’s technical objectives are :  

• to demonstrate thick epitaxial growth of Gallium-Nitride layers on silicon substrate (GaN-on-Silicium) with high crystal quality
• to demonstrate the fabrication of vertical power devices able to withstand high voltages (typically >1200V) with low specific Ron.

At a scientific level, ELEGaNT intends to increase scientific knowledge in terms of hetero-epitaxy processes, engineering, characterization and device physics of gallium-nitride based vertical transistors. High quality GaN on GaN devices already exist, and so the key to this project is to enable the same excellent performance as GaN on GaN, but with low cost GaN on silicon substrates.